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UNISONIC TECHNOLOGIES CO., LTD 2SA1797
POWER TRANSISTOR
FEATURES
* Low Saturation Voltage. VCE(SAT)=-0.35V(Max) at IC / IB=-1A / -50mA * Excellent DC Current Gain Characteristics
PNP SILICON TRANSISTOR
ORDERING INFORMATION
Normal 2SA1797-x-AA3-R 2SA1797-x-AB3-R 2SA1797-x-T9N-B 2SA1797-x-T9N-K 2SA1797-x-TN3-R 2SA1797-x-TN3-T Ordering Number Lead Free Plating 2SA1797L-x-AA3-R 2SA1797L-x-AB3-R 2SA1797L-X-T9N-B 2SA1797L-x-T9N-K 2SA1797L-x-TN3-R 2SA1797L-x-TN3-T Package Halogen Free 2SA1797G-x-AA3-R SOT-223 2SA1797G-x-AB3-R SOT-89 2SA1797G-x-T9N-B TO-92NL 2SA1797G-x-T9N-K TO-92NL 2SA1797G-x-TN3-R TO-252 2SA1797G-x-TN3-T TO-252 Pin Assignment 1 2 3 B C E B C E E C B E C B B C E B C E Packing Tape Reel Tape Reel Tape Box Bulk Tape Reel Tube
www.unisonic.com.tw Copyright (c) 2010 Unisonic Technologies Co., Ltd
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ABSOLUTE MAXIMUM RATINGS (Ta=25C)
PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current DC PULSE(Note 1) TO-92NL SOT-223 SOT-89 TO-252 SYMBOL VCBO VCEO VEBO IC
PNP SILICON TRANSISTOR
Collector Power Dissipation
PC
Junction Temperature TJ Storage Temperature TSTG Note: 1. Single pulse, PW=10ms 2. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied.
RATINGS -50 -50 -6 -2 -5 1 0.8 0.5 1.9 150 -55 ~ +150
UNIT V V V A A W W W W C C
ELECTRICAL CHARACTERISTICS (Ta=25C, unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS Collector-Base Breakdown Voltage BVCBO IC = -50A Collector-Emitter Breakdown Voltage BVCEO IC = -1mA Emitter-Base Breakdown Voltage BVEBO IE = -50A Collector Cutoff Current ICBO VCB = -50V Emitter Cutoff Current IEBO VEB = -5V Collector-Emitter Saturation Voltage VCE(SAT) IC/IB = -1A/-50mA (Note) DC Current Gain hFE VCE = -2V, IC=-0.5A (Note) Transition Frequency fT VCE = -2V, IE=0.5A, f=100MHz Output Capacitance Cob VCB = -10V, IE=0A, f=1MHz Note: Measured using pulse current. MIN -50 -50 -6 MAX UNIT V V V -0.1 A -0.1 A -0.15 -0.35 V 400 200 MHz 36 pF TYP
120
CLASSIFICATION OF hFE
RANK RANGE A 120-240 B 200-400
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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TYPICAL CHARACTERISTICS
Grounded Emitter Output Characteristics Ta=25 IB=10mA
9mA 8mA 7 mA A 6m 5mA 4mA 3mA 2mA 1mA
PNP SILICON TRANSISTOR
2.0 Collector Current, Ic (A) 1.8 1.6 1.4 1.2 1
800m 600m 400m 200m 0
-10 -5 -2 -1 -0.5 -0.2 -0.1 -0.05 -0.02 -0.01 -5m
Grounded Emitter Propagation Characteristics VCE=2V
Collector Current, Ic (mA)
Ta =1 00
Ta=2 5
0 1 2 3 4 5 6 7 8 9 10 Collector to Emitter Voltage, VCE (V)
-2m -1m 0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 Base to Emitter Voltage, VBE (V)
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
Collector Saturation voltage, VCE(SAT) (V)
DC Current Gain, hFE
Ta=
-40
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PNP SILICON TRANSISTOR
UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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